Thermocompression Bonding with Active Oxide Removal

28.05.2026

Innovative Technology AOR TCB™ helps enable the development of more powerful high-bandwidth memory. ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎ ‎by Dr. Ami Eitan, SVP, Chief Scientific Officer, ASMPT

AI and high-performance computing are driving rapid advances in high-bandwidth memory (HBM), pushing current packaging approaches to their limits in stack height, precision, and yield. This paper introduces ASMPT’s AOR TCB™ technology, a fluxless thermocompression bonding approach that uses active oxide removal to deliver clean, residue-free interconnects. By improving bonding uniformity and eliminating contamination risks, it helps reduce defects, accelerate time-to-yield, and lower overall cost per bit. The solution supports finer pitch scaling and higher-density stacking, addressing key challenges in next-generation HBM manufacturing. Overall, AOR TCB™ offers a practical path toward more reliable and scalable integration for future AI and chiplet applications.

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Thermocompression Bonding with Active Oxide Removal

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