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LASER1205

Die laserbasierten Wafer-Trennmaschinen von ASMPT sind führend in der Kantenqualität bei niedrigsten Betriebskosten, basierend auf VI-Dicing- und/oder Matrix-Grooving-Prozessen. ASMPT hat ein breites Portfolio an Optionen für alle Modelle entwickelt, um den spezifischen Herausforderungen der Märkte unserer Kunden gerecht zu werden, sowohl für OSAT- als auch für Tier-1-IDM-Unternehmen. Unser neuestes Modell ist G-UV-USP, das für Nutanwendungen im Speichermarkt verwendet wird.

The Platform

Die LASER1205-Plattform ist eine Systemfamilie, die speziell für die Trennung und/oder Rillung von Halbleiterwafern mittels Laserenergie entwickelt wurde. Die Familie umfasst vollautomatische Systeme, die für eine dauerhaft hochwertige Produktion in einer industriellen Umgebung konzipiert sind.

Das ergonomische Design, das benutzerfreundliche Touchscreen-Display und die einfache Bedienung ermöglichen dem Bediener eine einfache Steuerung des Systems für eine Vielzahl von Produkten. Da die LASER1205-Systeme den Industriestandards gemäß den CE-Vorschriften entsprechen, sind für die sichere Bedienung der Systeme keine besonderen Vorsichtsmaßnahmen oder Schulungen erforderlich.

Multi-beam Technology

The multi-beam technology of ASMPT ALSI uses a Matrix-DOE to provide a fully optimized process and superior customer value for:

  • Achieving low Heat Affected Zone (HAZ)
  • Achieving low or Zero burr
  • Creating a smooth bottom and steep sidewalls

To discover all about the UV-USP technology, view the video.

Grooving UV-USP Grooving UV Dicing UV UVP Dicing IR
Process Grooving Grooving Dicing & Grooving Dicing
Kerf check "On the Fly" Yes Yes Yes No
Wave length 343 nm 355 nm 355 nm 1064 nm
Pulse length ps/fs ns ns ns
Wafer thickness 60 - 800 µm 60 - 800 µm 20 - 200 µm 50 - 300 µm
Wafer size Up to 12" Up to 12" Up to 12" Up to 12"

Merkmale und Vorteile

LASER1205 Grooving UV USP

Best of class Process Quality
  • Process for HP Grooving UV USP wavelength 343 µm; pulse length 0.5 .. 10 ps
  • Production example burr < 1 µm
  • Process depth (w/wo metal) < 1 µm
  • Die strength > 800 MP
  • Process control In-line vision and process parameter logging
Production Scalability
  • Full automated calibration D-DOE set < 1 µm
  • Flexibility up to 8 DOE’s recipe selectable
  • Proven platform concept for last 10 years
Compliant with Production Chain
  • Wafer handling capable of handling wafer thickness down to 80 µm grooved wafers
Competitive CoO
  • Production speed UPH same or better than Grooving UV processes

LASER1205 Grooving UV

Best of class Process Quality
  • Dedicated to HP Grooving UV wavelength 355 µm; pulse length ns range
  • Combined with Multi-Beam concept resulting in nice U-shape grooving profiles
  • Process control in-line vision and process parameter logging
Production Scalability
  • Full automated calibrations accurate trenching and matrix DOE set < 1 µm; power level < 0.1 W; logging;
  • Flexibility up to 8 DOE’s (recipe selectable)
Compliant with Production Chain
  • Wafer handling option to convert accurately between 8" and 12“ frames
  • Cassette load station manual, Automated Material Handling System (AMHS)
  • Factory control SECS/GEM interface
Competitive CoO
  • UPH Gain due to indexing > 20%
  • UPH Gain due to Kerf Check “On-the-Fly” > 25%

LASER1205 Dicing UVP

Best of class Process Quality
  • Dedicated to HP UV Dicing wavelength 355 µm; pulse length 0.5 .. 10 ps
  • Combined with Multi beam concept resulting in low HAZ values (< 3 µm)
  • Process control in-line vision and process parameter logging
Production Scalability
  • Full automated calibrations accurate trenching, line, matrix and V-DOE set <1µm; power level < 0.1 W
  • Flexibility up to 8 DOE’s (recipe selectable)
Compliant with Production Chain
  • Wafer handling option to convert accurately between 8" and 12“ frames
  • Cassette load station manual, Automated Material Handling System (AMHS)
  • Factory control SECS/GEM interface
Competitive CoO
  • High speed Full cut process
  • One production step for multi layered wafers (DAF tape; Backside metals; Topside structures)
  • Low consumption of coating

LASER1205 Dicing IR

Best of class Process Quality
  • High power IR Dicing wavelength 1064 µm; pulse length ns range
  • Work horse for GaAs dicing up to 300 µm thickness
  • Die strength enhancement by the patented wet etch post process is very effective to enhance side wall quality and burr removal
Production Scalability
  • Full recipe control for coating, dicing and cleaning
  • Flexibility up to 3 DOE’s (recipe selectable)
Compliant with Production Chain
  • Wafer handling options to convert accurately between 8" and 12“ frames
  • Cassette load station manual, Automated Material Handling System (AMHS)
  • Factory control SECS/GEM interface

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